tpc8a01 TOSHIBA Semiconductor CORPORATION, tpc8a01 Datasheet - Page 9

• Manufacturer Part Number: tpc8a01
• Description: Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q2(Includes Schottky Barrier Diode)
10000
50
40
30
20
10
1000
0
100
-80
1.6
1.2
0.8
0.4
10
2
0
1
0
0.1
(1)
(2)
(3)
(4)
VGS=4.5V
-40
40
Drain-source voltage V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
VGS=10V
Capacitance – V
0
Device mounted on a glass-epoxy board (
(Note 2a)
Device mounted on a glass-epoxy board
(b) (Note 2b)
R
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
1
80
DS (ON)
t = 10 s
P
operation (Note 3b)
operation (Note 3b)
D
40
– Ta
– Ta
120
ID=8.5A
ID=2.1/4.3/8.5A
80
DS
DS
Common source
Pulse test
10
Common source
Ta = 25°C
f = 1MHz
V GS = 0 V
(V)
160
4.3
120
2.1
C oss
C iss
C rss
a)
200
160
100
9
40
30
20
10
100
0.1
0
10
1
3
2
1
0
0
-80
0
VDS
10
10
Dynamic input/output characteristics
-
0.2
-40
20
Drain-source voltage V
Ambient temperature Ta (°C)
Total gate charge Q
30
5
-
0.4
3
0
6
40
I
DR
V
1
-
th
0.6
– V
50
– Ta
40
VGS
12
DS
VGS=0V
60
-
g
0.8
DS
80
Common source
I D = 8.5 A
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
70
(nC)
Common source
V DS = 10 V
I D = 1 mA
Pulse test
VDD=24V
(V)
80
-
1
120
2006-11-16
TPC8A01
90
-
1.2
100
160
40
30
20
10
0