buk7506 NXP Semiconductors, buk7506 Datasheet - Page 2

• Manufacturer Part Number: buk7506
• Description: Buk7506-55a; Buk7606-55a Trenchmos Tm Standard Level Fet
• Manufacturer: NXP Semiconductors

5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Philips Semiconductors
9397 750 08421
Product data
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
W
D
D
DM
DR
DRM
j
stg
j
DS
tot
DS
DGR
GS
tot
DSon
DSS
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
reverse drain current (DC)
pulsed reverse drain current
non-repetitive avalanche energy
Quick reference data
Limiting values
[1]
[2]
Current is limited by power dissipation chip rating
Continuous current is limited by package
Conditions
T
T
V
Conditions
T
Figure 2
T
T
Figure 3
T
T
T
unclamped inductive load; I
V
starting T
R
Rev. 02 — 03 July 2001
mb
mb
mb
mb
mb
mb
mb
mb
GS
DS
T
T
GS
j
j
= 25 C; V
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 10 V; I
= 25 C
= 175 C
BUK7506-55A; BUK7606-55A
= 20 k
55 V; V
and
mb
= 25 C
D
3
Figure 1
GS
GS
GS
= 25 A
GS
= 10 V; R
= 10 V
= 10 V;
= 10 V;
p
p
10 s;
10 s
GS
Figure 2
D
= 75 A;
= 50 ;
TrenchMOS™ standard level FET
[1]
[1]
[2]
[2]
[1]
[2]
Typ
5.3
Min
55
55
© Philips Electronics N.V. 2001. All rights reserved.
Max
55
154
300
175
6.3
13.2
Max
55
55
154
75
75
616
300
+175
+175
154
75
616
1.1
20
Unit
V
A
W
m
m
Unit
V
V
V
A
A
A
A
W
A
A
A
J
C
C
C
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