buk7506 NXP Semiconductors, buk7506 Datasheet - Page 6

• Manufacturer Part Number: buk7506
• Description: Buk7506-55a; Buk7606-55a Trenchmos Tm Standard Level Fet
• Manufacturer: NXP Semiconductors

Table 5:
T
Philips Semiconductors
9397 750 08421
Product data
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
I D
(A)
= 25 C; t
= 25 C
R DSon
400
350
300
250
200
150
100
function of drain-source voltage; typical values.
of drain current; typical values.
(m )
50
Characteristics
0
12
10
8
6
4
2
0
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
0
12
0
14
p
= 300 s
20
20
2
10 9
8.5
40
V GS (V) =
4
…continued
60
5.5
6
V GS (V) =
80
6
8
6.5
V DS (V)
100
7.5
Conditions
I
Figure 15
I
V
10
7
8
S
S
03nf29
03nf30
I D (A)
GS
= 30 A; V
= 20 A; dI
10
120
= 10 V; V
6.5
5.5
4.5
Rev. 02 — 03 July 2001
GS
S
BUK7506-55A; BUK7606-55A
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
T
R DSon
j
(m )
a
= 25 C; I
a
=
of gate-source voltage; typical values.
factor as a function of junction temperature.
8.5
7.5
6.5
5.5
4.5
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
2
1
0
8
7
6
5
4
--------------------------- -
R
-60
5
DSon 25 C
R
DSon
D
Min
-20
= 25 A
TrenchMOS™ standard level FET
10
20
Typ
0.85
80
200
60
© Philips Electronics N.V. 2001. All rights reserved.
100
15
V GS (V)
140
Max
1.2
T j ( o C)
03nf28
03ne89
180
20
Unit
V
ns
nC
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