tpc6109-h TOSHIBA Semiconductor CORPORATION, tpc6109-h Datasheet

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tpc6109-h

Manufacturer Part Number
tpc6109-h
Description
Toshiba Field Effect Transistor Silicon P Channel Mos Type Ultra-high-speed U-mosiii
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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High-Efficiency DC/DC Converter Applications
Absolute Maximum Ratings
Thermal Characteristics
Small footprint due to small and thin package
Low drain-source ON-resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (t = 5 s) (Note 2a)
Drain power dissipation (t = 5 s) (Note 2b)
Single-pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to ambient (t = 5 s)
Thermal resistance, channel to ambient (t = 5 s)
Note: For Notes 1 to 5, see page 3.
Caution: This transistor is an electrostatic-sensitive device. Handle with care.
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
Characteristics
DC
Pulse
GS
= 20 kΩ)
DSS
th
= −0.8 to −2.0 V (V
= −10 μA (max) (V
(Note 1)
(Note 1)
(Note 3)
(Note 4)
(Note 2a)
(Note 2b)
DS (ON)
(Ta = 25°C)
TPC6109-H
fs
| = 8.0 S (typ.)
Symbol
V
V
V
E
E
T
= 44 mΩ (typ.)
I
I
T
DGR
GSS
P
P
DSS
DS
I
DP
AR
AS
AR
stg
D
ch
R
R
D
D
DS
Symbol
th (ch-a)
th (ch-a)
= −10 V, I
= −30 V)
−55 to150
1
Rating
0.055
16.3
−30
−30
±20
−20
150
2.2
0.7
−5
−5
178.5
Max
56.8
D
= −1 mA)
°C/W
°C/W
Unit
Unit
mJ
mJ
°C
°C
W
V
V
V
A
A
Weight: 0.011 g (typ.)
JEDEC
JEITA
TOSHIBA
Circuit Configuration
1. Drain
2. Drain
3. Gate
6
1
TPC6109-H
5
2
2-3T1A
4. Source
5. Drain
6. Drain
2008-01-15
4
3
Unit: mm

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tpc6109-h Summary of contents

Page 1

... AS − 0.055 AR (Note 4) T 150 ch −55 to150 T stg Symbol Max R 56.8 th (ch-a) (Note 2a) R 178.5 th (ch-a) (Note 2b) 1 TPC6109-H Unit Drain 4. Source V 2. Drain 5. Drain 3. Gate 6. Drain A ⎯ JEDEC W ⎯ JEITA TOSHIBA 2-3T1A mJ Weight: 0.011 g (typ °C °C Circuit Configuration ...

Page 2

... − (Ta = 25°C) Symbol Test Condition ⎯ I DRP = − DSF TPC6109-H Min Typ. Max = 0 V ⎯ ⎯ ± ⎯ ⎯ − −30 ⎯ ⎯ −15 ⎯ ⎯ −0.8 ⎯ −2.0 ⎯ ...

Page 3

... Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: ● to the lower left of the Part No. marking indicates Pin 1. Lot No. (weekly code) Product-specific code A line indicates lead (Pb)-free package or lead (Pb)-free finish. FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPC6109-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) 2008-01-15 ...

Page 4

... Drain-source voltage V −0.5 −0.4 −0.3 −0.2 −0.1 0 −5 −4 0 Gate-source voltage V 1000 100 10 −100 −0.1 Drain Current I 4 TPC6109-H I – Common source Ta = 25°C Pulse test −3.2 −3 −2.8 −2.6 −2 −2.2 V −4 −6 −8 −10 ( – V ...

Page 5

... Ambient temperature Ta (°C) −40 Common source −5A − 25°C Pulse test − −24 V −25 −20 −15 −12 V −10 −6 V −5 0 160 TPC6109-H I – −5 V −10 V −3 V − Common source Ta = 25°C Pulse test 0.4 0.6 0.8 1 1.2 ( – ...

Page 6

... I D max (Pulse)* 1 ms* −10 10 ms* −1 *: Single-pulse Ta = 25°C Curves must be derated linearly with increase in temperature. V DSS max −0.1 −0.1 −1 −10 Drain-source voltage – 0 Pulse width t (s) w −100 (V) 6 TPC6109-H (2) (1) Single pulse 100 1000 2008-01-15 ...

Page 7

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPC6109-H 20070701-EN 2008-01-15 ...

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