tpc6109-h TOSHIBA Semiconductor CORPORATION, tpc6109-h Datasheet - Page 5

• Manufacturer Part Number: tpc6109-h
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type Ultra-high-speed U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
100
2.5
1.5
0.5
80
60
40
20
10
−0.1
−80
0
2
1
0
0
(1) t = 5 s
(1) DC
(2) t = 5 s
(2) DC
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
V GS = −4.5
V GS = −10 V
−40
Drain-source voltage V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
40
Capacitance – V
−1
0
R
(1) Device mounted on a glass-epoxy
(2) Device mounted on a glass-epoxy
DS (ON)
P
board (a) (Note 2a)
board (b) (Note 2b)
D
40
80
– Ta
−2.5 A
– Ta
I D = −5 , −2.5 , −1.2 A
−10
80
DS
I D = −5 A
DS
120
−1.2A
C oss
(V)
C iss
120
C rss
−100
160
160
5
−100
−0.1
−1.5
−0.5
−10
−40
−35
−30
−25
−20
−15
−10
−1
−2
−1
−5
−80
0
0
0
0
−6 V
Common source
I D = −5A
Ta = 25°C
Pulse test
−12 V
V DD = −24 V
2
−40
0.2
Drain-source voltage V
Ambient temperature Ta (°C)
Total gate charge Q
V DS
4
−10 V
Dynamic input/output
0.4
0
characteristics
−3 V
6
I
−5 V
DR
V
th
0.6
– V
40
8
−1 V
– Ta
−6V
V GS
DS
10
0.8
80
g
V DD = −24 V
DS
Common source
V DS = −10 V
I D = −1mA
Pulse test
Common source
Ta = 25°C
Pulse test
V GS = 0 V
(nC)
12
(V)
TPC6109-H
120
1
−12V
14
2008-01-15
160
1.2
16
−16
−14
−12
−10
−8
−6
−4
−2
0