tpc6109-h TOSHIBA Semiconductor CORPORATION, tpc6109-h Datasheet - Page 4

• Manufacturer Part Number: tpc6109-h
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type Ultra-high-speed U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

−10
100
0.1
−5
−4
−3
−2
−1
−8
−6
−4
−2
10
−0.1
0
0
1
−1
0
−10
Common source
V DS = −10 V
Pulse test
−8
−6
−1.5
Drain-source voltage V
Gate-source voltage V
−0.2
Drain Current I
−5
100°C
−2
−1
−4
−0.4
I
I
|Y
D
D
Tc = −55°C
−3.5
fs
– V
– V
−2.5
| – I
Tc = −55°C
DS
GS
−0.6
D
25°C
D
−3.2
100°C
−10
−3
GS
DS
(A)
Common source
V DS = −10 V
Pulse test
Common source
Ta = 25°C
Pulse test
V GS = −2.2 V
25°C
−0.8
(V)
(V)
−3.5
−2.6
−2.4
−2.8
−3
−100
−1
−4
4
1000
−0.5
−0.4
−0.3
−0.2
−0.1
−10
100
−8
−6
−4
−2
10
−0.1
0
0
0
0
−4
−10
Drain-source voltage V
Gate-source voltage V
−8
−6
−2
−3.5
−5
Drain Current I
R
V
−4
DS (ON)
I
DS
V GS = −10 V
D
Common source
Ta = 25°C Pulse test
– V
−10
−1
– V
−4.5 V
DS
−1.2A
GS
– I
−6
D
D
Common source
Ta = 25°C
Pulse test
−2.5 A
GS
Common source
T a = 25°C
Pulse test
DS
I D = −5 A
(A)
−15
V GS = −2.2 V
−8
(V)
(V)
TPC6109-H
2008-01-15
−3.2
−2.8
−2.4
−2.6
−3
−10
−20
−10