hat2031t Renesas Electronics Corporation., hat2031t Datasheet

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hat2031t

Manufacturer Part Number
hat2031t
Description
Silicon N Channel Power Mos Fet High Speed Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HAT2031T
Manufacturer:
RENESAS
Quantity:
12 000
Part Number:
hat2031t-EL
Manufacturer:
HYNIX
Quantity:
45
Part Number:
hat2031t-EL
Manufacturer:
HITACHI/日立
Quantity:
20 000
Features
Outline
Low on-resistance
Capable of 2.5 V gate drive
Low drive current
High density mounting
G
4
Silicon N Channel Power MOS FET
MOS1
High Speed Power Switching
TSSOP–8
1
D
S
2
S
3
HAT2031T
5
G
MOS2
8
D
S S
6 7
8 7
6 5
1 2
3 4
1, 8
2, 3, 6, 7 Source
4, 5
Drain
Gate
ADE-208-529F (Z)
February 1999
7th. Edition

Related parts for hat2031t

hat2031t Summary of contents

Page 1

... Silicon N Channel Power MOS FET High Speed Power Switching Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP– MOS1 HAT2031T Source ...

Page 2

... HAT2031T Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note duty cycle 2. 1 Drive Operation : When using the glass epoxy board (FR4 1.6 mm), PW 10s 3 ...

Page 3

... When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Transfer Characteristics Gate to Source Voltage V (V) DS HAT2031T 10 µs 100 µs DS(on 100 V (V) DS –25°C 25° 75° Pulse Test ...

Page 4

... HAT2031T Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.2 0.16 0.12 0.08 0. Gate to Source Voltage Static Drain to Source on State Resistance vs. Temperature 0.2 0. 0 0.08 0. – Case Temperature 4 Static Drain to Source on State Resistance 0.2 Pulse Test Pulse Test 0.1 0. 0.005 ...

Page 5

... Ciss 300 100 Crss (A) Drain to Source Voltage V Switching Characteristics 10 1000 duty < 500 8 200 6 GS 100 d(on 0.1 0.2 0.5 10 HAT2031T MHz Coss ( d(off ...

Page 6

... HAT2031T Switching Time Test Circuit Vin Monitor D.U. Vin Reverse Drain Current vs. Souece to Drain Voltage Pulse Test 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V (V) SD Switching Time Waveform Vout Monitor 10% Vin DD Vout 10% 90% td(on) tr 90% 10% 90% td(off) ...

Page 7

... Pulse Width PW (S) ch – f( (t) • ch – 210 °C/ °C When using the glass epoxy board (FR4 40x40x1.6 mm 100 100 Pulse Width PW (S) HAT2031T ch – 1000 10000 ch – 1000 10000 7 ...

Page 8

... HAT2031T 8 ...

Page 9

... Package Dimensions 3.00 ± 0 0.65 0.10 +0.08 0.22 –0.07 0.13 M 6.40 ± 0.20 0 – 8 ° 0.50 ± 0.10 Hitachi code TTP–8D EIAJ JEDEC HAT2031T Unit: mm — — 9 ...

Page 10

Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise ...

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