hat2031t Renesas Electronics Corporation., hat2031t Datasheet - Page 2

• Manufacturer Part Number: hat2031t
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2031T
Absolute Maximum Ratings (Ta = 25 C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Note:
Electrical Characteristics (Ta = 25 C)
Item
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Note:
2
1. PW
2. 1 Drive Operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
3. 2 Drive Operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
4. Pulse test
10 s, duty cycle
Symbol Min
I
I
V
R
R
|y
Ciss
Coss
Crss
t
t
t
t
V
t
1 %
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)
DS(on)
fs
|
Symbol
V
V
I
I
I
Pch
Pch
Tch
Tstg
D
D(pulse)
DR
DSS
GSS
Note2
NoteÇR
20
—
—
0.5
—
—
4.5
—
—
—
—
—
—
—
—
—
Note1
12
Typ
—
—
—
—
—
0.054
0.074
7
300
185
90
13
75
60
75
0.85
35
Max
—
—
1
1.5
0.070
0.098
—
—
—
—
—
—
—
—
1.11
—
Ratings
20
3.5
28
3.5
1
1.5
150
– 55 to + 150
10
12
Unit
V
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
A
A
Test Conditions
I
I
V
V
V
I
I
I
V
V
f = 1MHz
V
V
IF = 3.5 A, V
IF = 3.5 A, V
diF/ dt = 20 A/ s
D
G
D
D
D
GS
DS
DS
DS
GS
GS
DD
= 10 mA, V
=
= 2 A, V
= 2 A, V
= 2 A, V
= 12 V, V
= 10 V, I
= 10 V
=
= 0
= 4 V, I
10 V
100 A, V
Unit
V
V
A
A
A
W
W
C
C
10 V, V
GS
GS
DS
D
GS
GS
= 2 A
= 10 V
= 4 V
= 2.5 V
GS
D
GS
= 1m A
= 0
= 0
DS
= 0
= 0
DS
= 0
= 0
Note4
Note4
Note4
Note4