hat2031t Renesas Electronics Corporation., hat2031t Datasheet - Page 3

• Manufacturer Part Number: hat2031t
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

Main Characteristics
2.0
1.5
1.0
0.5
20
16
12
8
4
0
0
Test Condition :
Drain to Source Voltage
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Power vs. Temperature Derating
Ambient Temperature
Typical Output Characteristics
10V
5 V
2
4 V
50
4
100
6
V
V
Pulse Test
GS
GS
150
Ta (°C)
V
DS
8
= 1.5 V
= 1.5 V
2.0 V
2.5 V
(V)
3 V
200
10
0.03
0.01
100
0.3
0.1
30
10
20
16
12
3
1
8
4
0
0.1
Ta = 25 °C
1 shot Pulse
Operation in
this area is
limited by R
Note 5 :
Gate to Source Voltage
Drain to Source Voltage
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Transfer Characteristics
Maximum Safe Operation Area
0.3
1
1
DS(on)
–25°C
25°C
2
3
10 µs
3
100 µs
Tc = 75°C
10
V
Pulse Test
DS
V
HAT2031T
V
GS
DS
4
30
= 10 V
(V)
(V)
100
5
3