hat2031t Renesas Electronics Corporation., hat2031t Datasheet - Page 4

• Manufacturer Part Number: hat2031t
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2031T
4
0.16
0.12
0.08
0.04
0.16
0.12
0.08
0.04
0.2
0.2
–40
0
0
Static Drain to Source on State Resistance
Drain to Source Saturation Voltage vs.
V
Gate to Source Voltage
GS
Case Temperature
2
0
= 2.5 V
Gate to Source Voltage
4 V
vs. Temperature
40
4
I = 2, 1, 0.5 A
D
80
6
Pulse Test
Pulse Test
Tc
2, 1, 0.5 A
V
I
120
GS
D
8
(°C)
= 2 A
1 A
0.5 A
(V)
160
10
0.005
0.002
0.05
0.02
0.01
0.5
0.2
0.1
50
20
10
Static Drain to Source on State Resistance
5
2
1
0.2
0.2
Pulse Test
Forward Transfer Admittance vs.
0.5
0.5
Drain Current
Drain Current I
vs. Drain Current
Tc = –25 °C
1
1
Drain Current
25 °C
2.5 V
2
2
V
GS
V
Pulse Test
I
D
= 4 V
75 °C
D
DS
5
5
(A)
(A)
= 10 V
10
10
20
20