upa1856gr-9jg Renesas Electronics Corporation., upa1856gr-9jg Datasheet - Page 2

• Manufacturer Part Number: upa1856gr-9jg
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
2
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
0
TEST CIRCUIT 1 SWITCHING TIME
Duty Cycle
PG.
( )
= 1 s
CHARACTERISTICS
R
1 %
G
D.U.T.
R
V
DD
L
I
Wave Form
V
Wave Form
D
GS
SYMBOL
R
R
R
R
V
V
| y
t
t
Q
Q
I
I
DS(on)1
DS(on)2
DS(on)3
DS(on)4
C
C
GS(off)
C
d(off)
Q
F(S-D)
Q
A
GSS
d(on)
DSS
t
t
t
oss
GS
GD
rr
fs
iss
rss
r
f
G
rr
= 25°C)
V
I
|
D
GS
0
0
Data Sheet D13808EJ3V0DS
( )
10 %
10 %
t
( )
d(on)
V
V
V
V
V
V
V
V
V
V
f = 1 MHz
V
I
V
R
V
I
V
I
I
di/dt = 10 A / s
D
D
F
F
DS
GS
DS
DS
GS
GS
GS
GS
DS
GS
DD
GS
G
DS
GS
= 4.5 A, V
= 4.5 A, V
= –2.5 A
= –4.5 A
= 10
t
90 %
= –20 V, V
= ±12 V, V
= –10 V, I
= –10 V, I
= –4.5 V, I
= –4.0 V, I
= –2.7 V, I
= –2.5 V, I
= –10 V
= 0 V
= –10 V
= –4.0 V
= –16 V
= –4.0 V
on
t
r
V
I
D
TEST CONDITIONS
GS
t
d(off)
(on)
GS
GS
D
D
D
D
D
D
GS
DS
= 0 V
= 0 V
t
= –1 mA
= –2.5 A
off
= –2.5 A
= –2.5 A
= –2.5 A
= –2.5 A
90 %
90 %
= 0 V
= 0 V
t
10 %
f
TEST CIRCUIT 2 GATE CHARGE
PG.
MIN.
–0.5
3
I
G
= 2 mA
50
TYP.
–1.1
0.86
700
208
100
300
528
242
698
8.8
6.0
2.1
2.8
2.2
37
39
52
57
32
D.U.T.
MAX.
–1.5
–10
m
45
48
72
77
10
PA1856
UNIT
m
m
m
m
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
S
V
A
A
R
V
L
DD