upa1856gr-9jg Renesas Electronics Corporation., upa1856gr-9jg Datasheet - Page 4

• Manufacturer Part Number: upa1856gr-9jg
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
100
100
30
40
60
40
40
70
60
50
20
60
80
80
0.01
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.01
DRAIN TO SOURCE ON STATE RESISTANCE vs.
CHANNEL TEMPERATURE
I
D
V
V
= 2.5 A
GS
GS
= 4.0 V
= 2.5 V
T
ch
0.1
T
0.1
0
I
I
A
D
T
D
T
T
T
- Channel Temperature -˚C
A
= 125˚C
- Drain Current - A
A
A
A
- Drain Current - A
= 125˚C
= 25˚C
= 75˚C
= 25˚C
75˚C
25˚C
25˚C
50
1
1
V
100
10
10
GS
= 2.5 V
2.7 V
4.0 V
4.5 V
Data Sheet D13808EJ3V0DS
100
150
100
120
100
100
20
40
30
60
60
50
40
80
60
40
80
20
0.01
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.01
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
V
V
GS
GS
= 2.7 V
= 4.5 V
V
2
GS
0.1
0.1
I
I
- Gate to Source Voltage - V
D
D
T
A
T
- Drain Current - A
- Drain Current - A
A
= 125˚C
4
= 125˚C
75˚C
25˚C
25˚C
75˚C
25˚C
25˚C
1
1
6
8
10
10
I
D
= 2.5 A
10
100
100
PA1856
12