upa1856gr-9jg Renesas Electronics Corporation., upa1856gr-9jg Datasheet - Page 5

• Manufacturer Part Number: upa1856gr-9jg
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

10000
1000
0.01
100
100
0.1
10
10
1
0.4
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
0.1
V
V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
F(S-D)
DS
0.6
- Drain to Source Voltage - V
1000
- Source to Drain Voltage - V
100
0.1
1
10
1
1m
0.8
10
10m
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1.0
C
C
C
f = 1 MHz
V
oss
rss
iss
GS
= 0V
Data Sheet D13808EJ3V0DS
100
100m
1.2
PW - Pulse Width - S
1
10000
1000
100
10
0
8
6
4
2
0.1
0
V
R
V
10
GS(on)
DD
G
I
D
Mounted on ceramic substrate
of 5000 mm x 1.1 mm
Single Pulse
P
= 10
DYNAMIC INPUT CHARACTERISTICS
= 4.5 A
1
= 10 V
D
(FET1) : P
SWITCHING CHARACTERISTICS
= 4.0 V
2
62.5 ˚C/W
Q
I
D
3
2
V
G
- Drain Current - A
100
D
DD
- Gate Charge - nC
(FET2) = 1:1
= 16 V
4
10 V
5
1
6
1000
7
8
t
t
t
t
d(on)
d(off)
f
r
9
PA1856
10
10
5