upa1856gr-9jg Renesas Electronics Corporation., upa1856gr-9jg Datasheet - Page 3

• Manufacturer Part Number: upa1856gr-9jg
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
100
1.5
80
60
40
1.0
0.5
20
20
16
12
8
4
0
0
50
0.0
V
I
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
D
DS
= 1 mA
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
= 10 V
T
V
30
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
ch
0.2
T
DS
A
0
- Drain to Source Voltage - V
- Channel Temperature - ˚C
- Ambient Temperature - ˚C
V
60
GS
0.4
= 10 V
50
90
0.6
4.5 V
100
A
120
= 25°C)
0.8
2.5 V
4.0 V
150
Data Sheet D13808EJ3V0DS
150
1.0
0.00001
0.0001
0.001
0.01
0.01
100
0.01
100
100
0.1
0.1
0.1
10
10
10
1
1
1
0.1
0.01
0
Substrate of 5000 mm x 1.1 mm
T
Single Pulse
Mounted on Ceramic
P
V
V
A
D
FORWARD BIAS SAFE OPERATING AREA
DS
DS =
(FET1) : P
FORWARD TRANSFER ADMITTANCE Vs.
DRAIN CURRENT
= 25˚C
= 10V
0.5
V
TRANSFER CHARACTERISTICS
V
10 V
DS
GS
0.1
D
- Drain to Source Voltage - V
(FET2) = 1:1
- Gate to Sorce Voltage - V
I
D
1.0
1
- Drain Current - A
T
2
A
= 25 ˚C
1.5
125 ˚C
1
25 ˚C
75 ˚C
2.0
10
10
2.5
PA1856
100
3.0
100
3