m28f010 Intel Corporation, m28f010 Datasheet
m28f010
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m28f010 Summary of contents
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... Intel’s M28F010 is a 1024-Kbit byte-wide in-system re-writable CMOS nonvolatile flash memory It is orga- nized as 131 072 bytes of 8 bits and is available in a 32-pin hermetic CERDIP package The M28F010 is also available in 32-contact leadless chip carrier J-lead and Flatpack surface mount packages It offers the most ...
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... M28F010 271111 – 2 Figure 2 M28F010 Pin Configurations Symbol Type A – A INPUT ADDRESS INPUTS for memory addresses Addresses are internally 0 16 latched during a write cycle DQ – DQ INPUT OUTPUT DATA INPUT OUTPUT Inputs data during memory write cycles 0 7 outputs data during memory read cycles The data pins are active high ...
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... TTL-level control inputs fixed power sup- plies during erasure and programming and maxi- mum EPROM compatibility In the absence of high voltage on the V M28F010 is a read-only memory Manipulation of the external memory-control pins yields the standard EPROM read standby output disable and intelli- gent Identifier operations ...
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... BUS OPERATIONS Read The M28F010 has two control functions both of which must be logically active to obtain data at the outputs Chip-Enable (CE) is the power control and should be used for device selection Output-Enable (OE) is the output control and should be used ...
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... The manufacturer- and device-codes can also be read via the command register for instances where the M28F010 is erased and reprogrammed in the ) the read target system Following a write of 90H to the com- PPL ...
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... The second bus cycle must be followed by the desired command register write 6 Placing high voltage on the V write operations Device operations are selected by pin the con- writing specific data patterns into the command reg- ister Table 3 defines these M28F010 register commands Table 3 Command Definitions First Bus Cycle (1) (2) ...
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... Program Set-up) to the command register Figure 5 the Quick-Erase algorithm illus- trates how commands and bus operations are com- bined to perform electrical erasure of the M28F010 Refer to AC Erase Characteristics and Waveforms for specific timing parameters Set-up Program Program Commands ...
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... M28F010 ming Characteristics and Waveforms for specific timing parameters Program-Verify Command The M28F010 is programmed on a byte-by-byte ba- sis Byte programming may occur sequentially or at random Following each programming operation the byte just programmed must be verified The program-verify operation is initiated by writing C0H into the command register The register write ...
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... See DC Characteristics for value of V PPH power supply can be hard-wired to the device or switchable When V is switched V PP PPL ground no-connect with a resistor tied to ground or as defined in Characteristics Section Refer to Principles of Operation Figure 4 M28F010 Quick-Pulse Programming Algorithm Bus Command Operation Standby Write Set-up Program Write Program ...
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... NOTES 1 See DC Characteristics for value of V power supply can be hard-wired to the device or switchable When V is switched V PP ground no-connect with a resistor tied to ground or as defined in Characteristics Section Refer to Principles of Operation Figure 5 M28F010 Quick-Erase Algorithm 10 Bus Command Operation Standby Write Set-up Erase ...
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... Flash nonvolatility increases the usable battery life of your system because the M28F010 does not consume any power to retain code or data when the system is off Table 4 illus- trates the power dissipated when updating the ...
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... M28F010 ABSOLUTE MAXIMUM RATINGS b Case Temperature Under Bias Storage Temperature Voltage on Any Pin with b Respect to Ground Voltage on Pin A with 9 b Respect to Ground Supply Voltage with PP Respect to Ground b During Erase Program Supply Voltage with ...
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... 500 M28F010 Comments V Max Max Max Max OUT V PPL ...
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... M28F010 DC CHARACTERISTICS CMOS COMPATIBLE Symbol Parameter I Input Leakage Current LI I Output Leakage Current Standby Current CCS Active Read Current CC1 Programming Current CC2 Erase Current CC3 Leakage Current PPS Read Current PP1 Programming Current ...
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... Rise Fall time TEST CONDITIONS Input Rise and Fall Times (10% to 90%) Input Pulse Levels V Input Timing Reference Level Output Timing Reference Level AC CHARACTERISTICS Read-Only Operations Versions M28F010-90 M28F010-12 M28F010-15 M28F010-20 M28F010-25 Symbol Characteristic Min t t Read Cycle Time 90 AVAV RC t ...
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... M28F010 Figure 6 AC Waveforms for Read Operations 16 ...
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... AC CHARACTERISTICS Write Erase Program Operations Versions M28F010-90 M28F010-12 M28F010-15 M28F010-20 M28F010-25 Symbol Characteristic Min t t Write Cycle Time 90 AVAV Address Set-Up 0 AVWL AS Time t t Address Hold Time WLAX Data Set-up Time 50 DVWH Data Hold Time 10 WHDX DH t Write Recovery ...
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... Max chip programming time is specified lower than the worst case allowed by the programming algorithm since most bytes program significantly faster than the worst case byte Figure 7 M28F010 Typical Programming Time vs Temperature Figure 8 M28F010 Typical Programming Time Limits Unit ...
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... Figure 9 M28F010 Typical Erase Time vs Temperature Figure 10 M28F010 Typical Erase Time vs V M28F010 271111 – 12 271111 – 13 Voltage PP 19 ...
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... M28F010 Figure 11 AC Waveforms for Programming Operations 20 ...
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... Figure 12 AC Waveforms for Erase Operations M28F010 21 ...
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... M28F010 ADDITIONAL INFORMATION ER-20 ‘‘ETOX II Flash Memory Technology ER-24 ‘‘The Intel 28F010 Flash Memory’’ RR-60 ‘‘ETOX II Flash Memory Reliability Data Summary’’ AP-316 ‘‘Using Flash Memory for In-System Reprogrammable Nonvolatile Storage’’ AP-325 ‘‘Guide to Flash Memory Reprogramming’ ...