m28f010 Intel Corporation, m28f010 Datasheet - Page 18

• Manufacturer Part Number: m28f010
• Description: 1024k 128k X 8 Cmos Flash Memory
• Manufacturer: Intel Corporation

M28F010
ERASE AND PROGRAMMING PERFORMANCE
NOTES
1 25 C 12 0V V
2 Minimum byte programming time excluding system overhead is 16 msec (10 msec program
while maximum is 400 msec byte (16 msec x 25 loops allowed by algorithm) Max chip programming time is specified lower
than the worst case allowed by the programming algorithm since most bytes program significantly faster than the worst case
byte
18
Chip Erase Time
Chip Program Time
Erase Program Cycles
Parameter
PP
10 000 Cycles
Figure 7 M28F010 Typical Programming Time vs Temperature
Figure 8 M28F010 Typical Programming Time vs V
10 000
Min
100 000
Limits
Typ
5
2
(1)
(1)
24
Max
30
(2)
Cycles
Unit
Sec
Sec
Excludes 00H Programming
Prior to Erasure
Excludes System-Level Overhead
PP
Voltage
Comments
271111 – 11
271111 – 10
a
6 msec write recovery)