m28f410 STMicroelectronics, m28f410 Datasheet - Page 11

• Manufacturer Part Number: m28f410
• Description: 4 Megabit X8 Or X16, Block Erase Flash Memory
• Manufacturer: STMicroelectronics

Table 14. Read AC Characteristics
(T
Notes: 1. See Figure 3 and Table 8 for timing measurements.
Symbol
t
t
t
t
t
t
t
t
t
GHQX
A
GLQX
GLQV
EHQX
EHQZ
GHQZ
AXQX
ELQX
ELQV
t
t
t
AVQV
PHQV
AVAV
= –40 to 125°C; V
2. Sampled only, not 100% tested.
3. G may be delayed by up to t
(2)
(3)
(2)
(3)
(2)
(2)
(2)
(2)
(2)
t
t
t
Alt
t
PWH
t
t
t
t
ACC
t
t
OLZ
t
t
RC
OE
OH
OH
OH
CE
HZ
DF
LZ
Address Valid to
Next Address Valid
Address Valid to
Output Valid
Power Down High
to Output Valid
Chip Enable Low to
Output Transition
Chip Enable Low to
Output Valid
Output Enable Low
to Output Transition
Output Enable Low
to Output Valid
Chip Enable High
to Output Transition
Chip Enable High
to Output Hi-Z
Output Enable High
to Output Transition
Output Enable High
to Output Hi-Z
Address Transition
to Output Transition
Parameter
PP
= 12V ± 5%)
ELQV
- t
GLQV
V
after the falling edge of E without increasing t
Min
(1)
CC
80
0
0
0
0
0
Interface
SRAM
= 5V ± 5%
-80
Max
300
80
80
40
30
30
V
CC
Min
90
0
0
0
0
0
Interface
EPROM
= 5V ± 10% V
-90
M28F410 / 20
Max
300
90
90
45
35
35
CC
Min
100
0
0
0
0
0
Interface
ELQV
EPROM
= 5V ± 10% V
-100
.
Max
100
300
100
50
40
40
CC
Min
120
0
0
0
0
0
Interface
EPROM
= 5V ± 10%
-120
Max
120
300
120
55
45
45
Unit
11/38
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns