m28f410 STMicroelectronics, m28f410 Datasheet - Page 15
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m28f410
Manufacturer Part Number
m28f410
Description
4 Megabit X8 Or X16, Block Erase Flash Memory
Manufacturer
STMicroelectronics
Datasheet
1.M28F410.pdf
(38 pages)
Table 17A. Write AC Characteristics, Write Enable Controlled
(T
Notes: 1. See Figure 3 and Table 8 for timing measurements.
t
t
WHQV1
WHQV2
t
t
t
t
t
t
A
Symbol
PHBR
PHHWH
VPHWH
WHQV3
WHQV4
t
QVVPL
QVPH
t
t
t
t
t
t
t
t
t
t
WLWH
DVWH
WHDX
WHEH
WHWL
= 0 to 70°C or –40 to 85°C; V
PHWL
AVWH
WHAX
ELWL
AVAV
2. Time is measured to Status Register Read giving bit b7 = ’1’.
3. For Program or Erase of the Boot Block RP must be at V
4. Time required for Relocking the Boot Block.
5. Sampled only, not 100% tested.
(4, 5)
(2, 3)
(2, 3)
(5)
(5)
(5)
(5)
(2)
(2)
t
t
t
t
t
t
Alt
t
t
WPH
t
t
t
t
PHS
VPS
t
PHH
WC
WP
DH
CH
PS
CS
DS
AS
AH
Write Cycle Time
Power Down High to Write Enable Low
Chip Enable Low to Write Enable Low
Write Enable Low to Write Enable High
Data Valid to Write Enable High
Write Enable High to Data Transition
Write Enable High to Chip Enable High
Write Enable High to Write Enable Low
Address Valid to Write Enable High
Power Down VHH (Boot Block Unlock) to Write
Enable High
V
Write Enable High to Address Transition
Write Enable High to Output Valid (Word/Byte
Program)
Write Enable High to Output Valid (Boot Block
Erase)
Write Enable High to Output Valid (Parameter
Block Erase)
Write Enable High to Output Valid (Main Block
Erase)
Output Valid to Reset/Power Down High
Output Valid to V
Reset/Power Down High to Boot Block Relock
PP
High to Write Enable High
PP
PP
Low
Parameter
= 12V ± 5%)
HH
.
V
Min
210
100
100
0.3
0.3
0.6
CC
70
50
50
10
20
50
10
(1)
0
0
6
0
0
Interface
SRAM
= 5V ± 5%
-70
Max
M28F410 / 20
100
V
Min
210
100
100
CC
0.3
0.3
0.6
80
50
50
10
30
50
10
0
0
6
0
0
Interface
EPROM
= 5V ± 10%
-80
Max
100
Unit
sec
sec
sec
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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