m28f410 STMicroelectronics, m28f410 Datasheet - Page 30
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m28f410
Manufacturer Part Number
m28f410
Description
4 Megabit X8 Or X16, Block Erase Flash Memory
Manufacturer
STMicroelectronics
Datasheet
1.M28F410.pdf
(38 pages)
- Current page: 30 of 38
- Download datasheet (301Kb)
Figure 11. Program Flow-chart and Pseudo Code
Notes: 1. Status check of b3 (V
30/38
2. If a V
PP
Low or Program Erase is found, the Status Register must be cleared (CLRS instruction) before further P/E.C. operations.
Write Address
Read Status
Command
Write 40h
Register
& Data
b7 = 1
b3 = 0
b4 = 0
Start
End
YES
YES
YES
PP
Low) and b4 (Program Error) can be made after each byte/word programming or after a sequence.
NO
NO
NO
Error (1, 2)
Error (1, 2)
V PP Low
Program
PG instruction:
– write 40h command
– write Address & Data
(memory enters read status
state after the PG instruction)
do:
– read status register
while b7 = 1
If b3 = 0, V PP low error:
– error handler
If b4 = 0, Program error:
– error handler
(E or G must be toggled)
AI01278
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