h57v2562gtr Hynix Semiconductor, h57v2562gtr Datasheet - Page 10

• Manufacturer Part Number: h57v2562gtr
• Description: 256mb Synchronous Dram Based 4bank
• Manufacturer: Hynix Semiconductor

DC CHARACTERISTICS II
Note: 1. I
Rev 1.0 / Aug. 2009
Operating
Current
Precharge
Standby
Current
in Power Down
Mode
Precharge
Standby
Current
in Non Power
Down Mode
Active Standby
Current in
Power Down
Mode
Active Standby
Current in Non
Power Down
Mode
Burst Mode Op-
erating Current
Auto Refresh
Current
Self Refresh
Current
Parameter
2. Min. of tRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3. H57V2562GTR-XXC Series: Normal,
DD1
and I
DD4
Symbol
I
I
I
I
depend on output loading and cycle rates. Specified values are measured with the output open.
I
I
I
I
DD2NS
DD3NS
DD2PS
DD3PS
I
I
I
I
DD2N
DD3N
DD2P
DD3P
DD1
DD4
DD5
DD6
Burst length=1, One bank active
t
CKE ≤ V
CKE ≤ V
CKE ≥ V
Input signals are changed one time during
2clks. All other pins ≥ V
CKE ≥ V
Input signals are stable.
CKE ≤ V
CKE ≤ V
CKE ≥ V
Input signals are changed one time during
2clks.
All other pins ≥ V
CKE ≥ V
Input signals are stable.
t
t
CKE ≤ 0.2V
RC
CK
All banks active
RC
≥ t
≥ t
≥ t
(TA= 0 to 70
RC
CK
RC
IH
IH
IL
IL
IH
IL
IL
IH
(min), I
(min), I
(min), All banks active
H57V2562GTR-XXL Series: Low Power
(max), t
(max), t
(max), t
(max), t
(min), CS ≥ V
(min), CS ≥ V
(min), t
(min), t
Test Condition
OL
OL
DD
CK
CK
CK
CK
CK
CK
=0mA
=0mA
-0.2V or ≤ 0.2V
= ∞
= ∞
= 15ns
= ∞
= 15ns
= ∞
o
C)
IH
IH
DD
(min), t
(min), t
-0.2V or ≤ 0.2V
Normal
Low Power
CK
CK
= 15ns
= 15ns
Synchronous DRAM Memory 256Mbit
200
110
120
180
Speed (MHz)
166
100
160
90
15
28
20
2
2
8
5
5
2
1
H57V2562GTR Series
133
140
70
80
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2
3
10