h57v2562gtr Hynix Semiconductor, h57v2562gtr Datasheet - Page 13

• Manufacturer Part Number: h57v2562gtr
• Description: 256mb Synchronous Dram Based 4bank
• Manufacturer: Hynix Semiconductor

BASIC FUNCTIONAL DESCRIPTION
Mode Register
OP Code
Rev 1.0 / Aug. 2009
CAS Latency
BA1
A6
A9
0
0
0
0
0
1
1
1
1
0
1
BA0
A5
0
0
0
1
1
0
0
1
1
Burst Read and Single Write
A12
Burst Read and Burst Write
A4
0
1
0
1
0
1
0
1
0
Write Mode
A11
0
CAS Latency
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
A10
0
2
3
OP Code
A9
A8
0
A7
0
Burst Length
A2
0
0
0
0
1
1
1
1
Synchronous DRAM Memory 256Mbit
A6
CAS Latency
A1
0
0
1
1
0
0
1
1
Burst Type
A5
A0
0
1
0
1
0
1
0
1
A3
0
1
A4
Reserved
Reserved
Reserved
Full page
A3 = 0
H57V2562GTR Series
Burst Type
A3
BT
Sequential
Interleave
1
2
4
8
Burst Length
A2
Burst Length
Reserved
Reserved
Reserved
Reserved
A1
A3=1
1
2
4
8
A0
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