h57v2562gtr Hynix Semiconductor, h57v2562gtr Datasheet - Page 17

• Manufacturer Part Number: h57v2562gtr
• Description: 256mb Synchronous Dram Based 4bank
• Manufacturer: Hynix Semiconductor

Precharge
Write with
Precharge
Read with
CURRENT STATE TRUTH TABLE
Rev 1.0 / Aug. 2009
Current
State
Write
Read
Auto
Auto
CS RAS CAS WE
H
H
H
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
H
H
H
H
H
H
H
H
H
X
L
L
L
L
X
L
L
L
L
X
L
L
L
L
X
H
H
H
H
H
H
H
H
H
X
L
L
L
L
X
L
L
L
L
X
L
L
L
L
X
X
H
H
H
H
X
H
H
H
H
X
H
H
H
H
X
L
L
L
L
L
L
L
L
L
BA0/
BA1
BA
BA
BA
BA
BA
BA
BA
BA
BA
BA
BA
BA
X
X
X
X
X
X
X
X
X
X
Command
OP CODE
OP CODE
OP CODE
Col Add. A10
Col Add. A10
Col Add. A10
Col Add. A10
A
Row Add.
Row Add.
Row Add.
Col Add.
Col Add.
max
A10
A10
(Sheet 2 of 4)
X
X
X
X
X
X
X
X
X
X
X
X
X
-A0
Device Deselect
Mode Register Set
Auto or Self Refresh ILLEGAL
Precharge
Bank Activate
Write/WriteAP
Read/ReadAP
No Operation
Device Deselect
Mode Register Set
Auto or Self Refresh ILLEGAL
Precharge
Bank Activate
Write/WriteAP
Read/ReadAP
No Operation
Device Deselect
Mode Register Set
Auto or Self Refresh ILLEGAL
Precharge
Bank Activate
Write/WriteAP
Read/ReadAP
No Operation
Device Deselect
Description
Synchronous DRAM Memory 256Mbit
Continue the Burst
ILLEGAL
Termination Burst: Start
the Precharge
ILLEGAL
Termination Burst: Start
Write(optional AP)
Termination Burst: Start
Read(optional AP)
Continue the Burst
Continue the Burst
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
Continue the Burst
Continue the Burst
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
Continue the Burst
Continue the Burst
ILLEGAL
H57V2562GTR Series
Action
Notes
4,12
4,12
4,12
4,12
8,9
17
13
13
10
13
13
12
12
13
13
12
12
4
8