h57v2562gtr Hynix Semiconductor, h57v2562gtr Datasheet - Page 11

• Manufacturer Part Number: h57v2562gtr
• Description: 256mb Synchronous Dram Based 4bank
• Manufacturer: Hynix Semiconductor

AC CHARACTERISTICS I
Note:
1. Assume t
2. Access time to be measured with input signals of 1V/ns edge rate, from 0.8V to 0.2V. If t
to the parameter.
Rev 1.0 / Aug. 2009
System Clock Cycle Time
Clock High Pulse Width
Clock Low Pulse Width
Access Time From Clock
Data-out Hold Time
Data-Input Setup Time
Data-Input Hold Time
Address Setup Time
Address Hold Time
CKE Setup Time
CKE Hold Time
Command Setup Time
Command Hold Time
CLK to Data Output in Low-Z Time
CLK to Data Output in
High-Z Time
R
/ t
Parameter
F
(input rise and fall time) is 1ns. If t
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
(AC operating conditions unless otherwise noted)
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CK3
CK2
CHW
CLW
AC3
AC2
OH
DS
DH
AS
AH
CKS
CKH
CS
CH
OLZ
OHZ3
OHZ2
Speed
(MHz)
R
& t
F
> 1ns, then [(t
Min
5.0
2.0
2.0
2.0
1.5
0.8
1.5
0.8
1.5
0.8
1.5
0.8
1.0
-
-
-
-
-
200
1000
Max
4.5
4.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
R
+t
Synchronous DRAM Memory 256Mbit
Min
F
6.0
2.5
2.5
2.0
1.5
0.8
1.5
0.8
1.5
0.8
1.5
0.8
1.0
2.7
)/2-1]ns should be added to the parameter.
-
-
-
-
166
1000
1000
Max
5.4
5.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
R
> 1ns, then (t
Min
7.5
2.5
2.5
2.5
1.5
0.8
1.5
0.8
1.5
0.8
1.5
0.8
1.0
2.7
10
3
-
-
133
H57V2562GTR Series
1000
1000
Max
R
5.4
5.4
/2-0.5)ns should be added
6
6
-
-
-
-
-
-
-
-
-
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
1
1
2
2
1
1
1
1
1
1
1
1
11