k7r321882m Samsung Semiconductor, Inc., k7r321882m Datasheet - Page 10

• Manufacturer Part Number: k7r321882m
• Description: 1mx36-bit, 2mx18-bit, 4mx9-bit Qdrtm Ii B2 Sram
• Manufacturer: Samsung Semiconductor, Inc.

K7R323682M
K7R321882M
K7R320982M
DC ELECTRICAL CHARACTERISTICS
Notes: 1. Minimum cycle. I
ABSOLUTE MAXIMUM RATINGS*
*Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating
Input Leakage Current
Output Leakage Current
Operating Current (x36): DDR
Operating Current (x18): DDR
Operating Current ( x9): DDR
Standby Current(NOP): DDR
Output High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Input Low Voltage
Input High Voltage
Voltage on V
Voltage on V
Voltage on Input Pin Relative to V
Storage Temperature
Operating Temperature
Storage Temperature Range Under Bias
10. V
2. V
8. These are DC test criteria. DC design criteria is V
9. V
2. |I
3. |I
4. Minimum Impedance Mode when ZQ pin is connected to V
5. Operating current is calculated with 50% read cycles and 50% write cycles.
6. Standby Current is only after all pending read and write burst opeactions are completed.
7. Programmable Impedance Mode.
only and functional operation of the device at these or any other conditions above those indicated in the operati ng sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
DDQ
OH
OL
IL
IH
PARAMETER
|=(V
|=(V
(Min)DC=
(Max)DC=
must not exceed V
DD
DDQ
DDQ
DDQ
Supply Relative to V
Supply Relative to V
/2)/(RQ/5) 15% for 175
/2)/(RQ/5) 15% for 175
-
0.3V, V
V
DDQ
OUT
PARAMETER
=0mA.
+0.3, V
IL
(Min)AC=-1.5V(pulse width
D D
during normal operation.
IH
SS
(Max)AC=
SS
SYMBOL
SS
V
V
V
V
I
V
I
I
I
I
V
SB1
I
CC
CC
CC
OH1
OH2
OL
OL1
OL2
IL
IH
IL
RQ
RQ
V
DDQ
350 .
350 .
V
Output Disabled,
V
Cycle Time
V
Cycle Time
V
Cycle Time
Device deselected, I
f=Max,
All Inputs 0.2V or V
I
I
OH
OL
+0.85V(pulse width
DD
DD
DD
DD
=1.0mA
=-1.0mA
R E F
1Mx36 & 2Mx18 & 4Mx9 QDR
=Max ; V
=Max , I
=Max , I
=Max , I
3ns).
(V
50mV. The AC V
TEST CONDITIONS
DD
DDQ
=1.8V 0.1V, T
OUT
OUT
OUT
IN
t
t
t
KHKH
KHKH
KHKH
.
=V
- 10 -
=0mA
=0mA
=0mA
SS
Min
Min
Min
OUT
3ns).
to V
SYMBOL
IH
DD
V
T
T
=0mA,
/V
T
V
V
DDQ
-0.2V
BIAS
DDQ
STG
OPR
IL
DD
I N
levels are defined separately for measuring timing parameters.
A
=0 C to +70 C)
-20
-16
-20
-16
-20
-16
-20
-16
V
V
DDQ
DDQ
V
V
DDQ
REF
MIN
-0.5 to V
V
-0.3
-2
-2
/2-0.12 V
/2-0.12 V
-
-
-
-
-
-
-
-
SS
-0.5 to V
+0.1
-0.5 to 2.9
-65 to 150
-0.2
-10 to 85
RATING
0 to 70
DD+
DD
DDQ
DDQ
V
0.3
V
DDQ
REF
V
TM
MAX
870
740
760
650
720
620
300
270
0.2
+ 2
+ 2
/2+0.12
/2+0.12
DDQ
-0.1
+0.3
II b2 SRAM
UNIT NOTES
mA
mA
mA
mA
V
V
V
V
V
V
A
A
UNIT
Dec. 2003
V
V
V
C
C
C
Rev 2.0
8,10
1,5
1,5
1,5
1,6
2,7
3,7
8,9
4
4