k7r321884c Samsung Semiconductor, Inc., k7r321884c Datasheet - Page 19

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k7r321884c

Manufacturer Part Number
k7r321884c
Description
1mx36-bit, 2mx18 And 4mx9-bit Qdr Ii B4 Sram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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K7R323684C
K7R321884C
K7R320984C
JTAG DC OPERATING CONDITIONS
Note: 1. The input level of SRAM pin is to follow the SRAM DC specification
JTAG AC TEST CONDITIONS
Note: 1. See SRAM AC test output load on page 11.
JTAG AC Characteristics
JTAG TIMING DIAGRAM
Power Supply Voltage
Input High Level
Input Low Level
Output High Voltage(I
Output Low Voltage(I
Input High/Low Level
Input Rise/Fall Time
Input and Output Timing Reference Level
TCK Cycle Time
TCK High Pulse Width
TCK Low Pulse Width
TMS Input Setup Time
TMS Input Hold Time
TDI Input Setup Time
TDI Input Hold Time
SRAM Input Setup Time
SRAM Input Hold Time
Clock Low to Output Valid
(SRAM)
TMS
PI
TDO
TCK
TDI
Parameter
Parameter
Parameter
OL
OH
=2mA)
=-2mA)
t
CHCH
t
CLQV
Symbol
Symbol
V
TR/TF
V
V
V
V
V
1Mx36, 2Mx18 & 4Mx9 QDR
IH
OH
DD
OL
IH
IL
/V
t
t
t
Symbol
DVCH
MVCH
SVCH
IL
t
t
t
t
t
t
t
t
t
t
CHCH
MVCH
CHMX
DVCH
CHDX
SVCH
CHSX
CHCL
CLCH
CLQV
- 19 -
.
Min
-0.3
V
1.7
1.3
1.4
SS
t
t
t
CHMX
CHDX
CHSX
Min
50
20
20
5
5
5
5
5
5
0
t
CHCL
1.8/0.0
1.0/1.0
Typ
Min
1.8
0.9
-
-
-
-
Max
10
-
-
-
-
-
-
-
-
-
V
DD
Max
V
1.9
0.5
0.4
DD
+0.3
Rev. 1.1 August 2006
t
CLCH
TM
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
Unit
ns
V
V
V
V
V
V
V
II b4 SRAM
Note
Note
Note
1

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