A400CB10RC AMD [Advanced Micro Devices], A400CB10RC Datasheet - Page 40

• Manufacturer Part Number: A400CB10RC
• Description: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1.
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles.
38
Parameter
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time
(Note 3)
Typical program and erase times assume the following conditions: 25
checkerboard pattern.
the maximum program times listed.
for further information on command definitions.
Word Mode
Byte Mode
CC
= 1.8 V, 1,000,000 cycles.
Typ (Note 1)
3.5
D A T A
38
10
12
2
5
Am29SL400C
°
C, 2.0 V V
Max (Note 2)
S H E E T
300
360
15
40
30
CC
, 1,000,000 cycles. Additionally, programming typicals assume
Unit
µs
µs
s
s
s
s
Am29SL400C_00_A6 January 23, 2007
Excludes 00h programming prior to
erasure (Note 4)
Excludes system level overhead
(Note 5)
Comments
Table 5 on page 18