SST29EE010-120-3C-E SST [Silicon Storage Technology, Inc], SST29EE010-120-3C-E Datasheet - Page 3

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SST29EE010-120-3C-E

Manufacturer Part Number
SST29EE010-120-3C-E
Description
1 Megabit (128K x 8) Page Mode EEPROM
Manufacturer
SST [Silicon Storage Technology, Inc]
Datasheet
1 Megabit Page Mode EEPROM
SST29EE010, SST29LE010, SST29VE010
Write Operation Status Detection
The 29EE010/29LE010/29VE010 provide two software
means to detect the completion of a write cycle, in order
to optimize the system write cycle time. The software
detection includes two status bits: Data# Polling (DQ
and Toggle Bit (DQ
enabled after the rising WE# or CE# whichever occurs
first, which initiates the internal write cycle.
The actual completion of the nonvolatile write is asyn-
chronous with the system; therefore, either a Data#
Polling or Toggle Bit read may be simultaneous with the
completion of the write cycle. If this occurs, the system
may possibly get an erroneous result, i.e., valid data may
appear to conflict with either DQ
prevent spurious rejection, if an erroneous result occurs,
the software routine should include a loop to read the
accessed location an additional two (2) times. If both
reads are valid, then the device has completed the write
cycle, otherwise the rejection is valid.
Data# Polling (DQ
When the 29EE010/29LE010/29VE010 are in the inter-
nal write cycle, any attempt to read DQ
loaded during the byte-load cycle will receive the com-
plement of the true data. Once the write cycle is com-
pleted, DQ
for the next operation. See Figure 6 for Data# Polling
timing diagram and Figure 15 for a flowchart.
Toggle Bit (DQ
During the internal write cycle, any consecutive attempts
to read DQ
toggling between 0 and 1. When the write cycle is
completed, the toggling will stop. The device is then
ready for the next operation. See Figure 7 for Toggle Bit
timing diagram and Figure 15 for a flowchart. The initial
read of the Toggle Bit will typically be a “1”.
Data Protection
The 29EE010/29LE010/29VE010 provide both hard-
ware and software features to protect nonvolatile data
from inadvertent writes.
© 1998 Silicon Storage Technology, Inc.
7
6
will show true data. The device is then ready
will produce alternating 0’s and 1’s, i.e.
6
)
6
7
). The end of write detection mode is
)
7
or DQ
7
of the last byte
6
. In order to
7
)
3
Hardware Data Protection
Noise/Glitch Protection: A WE# or CE# pulse of less than
5 ns will not initiate a write cycle.
V
inhibited when V
Write Inhibit Mode: Forcing OE# low, CE# high, or WE#
high will inhibit the write operation. This prevents inad-
vertent writes during power-up or power-down.
Software Data Protection (SDP)
The 29EE010/29LE010/29VE010 provide the JEDEC
approved optional software data protection scheme for
all data alteration operations, i.e., Write and Chip erase.
With this scheme, any write operation requires the inclu-
sion of a series of three byte-load operations to precede
the data loading operation. The three byte-load se-
quence is used to initiate the write cycle, providing
optimal protection from inadvertent write operations,
e.g., during the system power-up or power-down. The
29EE010/29LE010/29VE010 are shipped with the soft-
ware data protection disabled.
The software protection scheme can be enabled by
applying a three-byte sequence to the device, during a
page-load cycle (Figures 4 and 5). The device will then
be automatically set into the data protect mode. Any
subsequent write operation will require the preceding
three-byte sequence. See Table 4 for the specific soft-
ware command codes and Figures 4 and 5 for the timing
diagrams. To set the device into the unprotected mode,
a six-byte sequence is required. See Table 4 for the
specific codes and Figure 8 for the timing diagram. If a
write is attempted while SDP is enabled the device will be
in a non-accessible state for ~ 300 µs. SST recommends
Software Data Protection always be enabled. See Figure
16 for flowcharts.
The 29EE010/29LE010/29VE010 Software Data Pro-
tection is a global command, protecting (or unprotecting)
all pages in the entire memory array once enabled (or
disabled). Therefore using SDP for a single page write
will enable SDP for the entire array. Single pages by
themselves cannot be SDP enabled or disabled.
CC
Power Up/Down Detection: The write operation is
CC
is less than 2.5V.
304-04 12/97
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8
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16
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4
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