SST29EE010-150-4C-EH SST [Silicon Storage Technology, Inc], SST29EE010-150-4C-EH Datasheet - Page 9

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SST29EE010-150-4C-EH

Manufacturer Part Number
SST29EE010-150-4C-EH
Description
1 Mbit (128K x8) Page-Mode EEPROM
Manufacturer
SST [Silicon Storage Technology, Inc]
Datasheet
1 Mbit Page-Mode EEPROM
SST29EE010 / SST29LE010 / SST29VE010
Data Sheet
TABLE 7: R
TABLE 8: C
TABLE 9: R
©2001 Silicon Storage Technology, Inc.
Symbol
T
T
Parameter
C
C
Symbol
N
T
I
LTH
PU-READ
PU-WRITE
DR
I/O
IN
END
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1
1
1
1
1
1
1
ECOMMENDED
APACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
ELIABILITY
Parameter
Power-up to Read Operation
Power-up to Write Operation
Description
I/O Pin Capacitance
Input Capacitance
Parameter
Endurance
Data Retention
Latch Up
C
HARACTERISTICS
S
YSTEM
P
OWER
-
UP
T
IMINGS
Minimum Specification
9
10,000
100
100
Units
Test Condition
Cycles
Years
mA
Minimum
V
V
I/O
IN
100
5
= 0V
= 0V
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
S71061-07-000 6/01
Maximum
Units
12 pF
6 pF
ms
µs
T7.1 304
T8.0 304
T9.5 304
304

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