PMEG6010ETR NXP [NXP Semiconductors], PMEG6010ETR Datasheet - Page 4

• Manufacturer Part Number: PMEG6010ETR
• Description: High-temperature 60 V, 1 A Schottky barrier rectifier
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
7. Characteristics
Table 7.
PMEG6010ETR
Product data sheet
Fig. 2.
Fig. 3.
Symbol
V
F
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
10
10
- 1
- 1
1
1
3
2
3
2
10
10
FR4 PCB, mounting pad for cathode 1 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Ceramic PCB, Al
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
- 3
- 3
duty cycle =
Characteristics
0.25
0.02
0.5
0.1
duty cycle =
1
0
0.25
0.02
0.5
0.1
1
0
Parameter
forward voltage
0.75
0.33
0.05
0.01
0.2
0.75
0.33
0.05
0.01
0.2
10
10
2
O
- 2
- 2
3
, standard footprint
Conditions
All information provided in this document is subject to legal disclaimers.
I
I
I
I
I
I
F
F
F
F
F
F
10
10
= 0.1 A; T
= 0.7 A; T
= 1 A; T
= 1 A; T
= 1 A; T
= 1 A; T
- 1
- 1
2
j
j
j
j
= 25 °C
= -40 °C
= 125 °C
= 150 °C
10 October 2012
j
j
= 25 °C
= 25 °C
1
1
High-temperature 60 V, 1 A Schottky barrier rectifier
10
10
Min
-
-
-
-
-
-
10
10
PMEG6010ETR
2
2
Typ
320
430
460
510
400
380
t
t
p
p
© NXP B.V. 2012. All rights reserved
(s)
(s)
006aab363
006aab364
Max
370
490
530
590
480
460
10
10
3
3
Unit
mV
mV
mV
mV
mV
mV
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