PMEG6010ETR NXP [NXP Semiconductors], PMEG6010ETR Datasheet - Page 6

• Manufacturer Part Number: PMEG6010ETR
• Description: High-temperature 60 V, 1 A Schottky barrier rectifier
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
PMEG6010ETR
Product data sheet
Fig. 6.
Fig. 8.
P
(pF)
R(AV)
(W)
C
250
d
200
150
100
2.5
2.0
1.5
1.0
0.5
50
0
0
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
T
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Average reverse power dissipation as a
function of reverse voltage; typical values
0
0
j
= 150 °C
amb
20
20
= 25 °C
40
40
(1)
V
V
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R
R
006aad120
006aab892
(2)
(V)
(V)
(3)
(4)
60
60
10 October 2012
High-temperature 60 V, 1 A Schottky barrier rectifier
Fig. 7.
Fig. 9.
P
P
F(AV)
(W)
R(AV)
(W)
1.00
0.75
0.50
0.25
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
T
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Average forward power dissipation as a
function of average forward current; typical
values
T
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Average reverse power dissipation as a
function of reverse voltage; typical values
0
0
j
j
= 175 °C
= 125 °C
(1)
0.5
20
(2)
PMEG6010ETR
1.0
40
(3)
I
F(AV)
© NXP B.V. 2012. All rights reserved
V
(1)
R
006aad151
006aad119
(4)
(V)
(A)
(2)
(3)
(4)
1.5
60
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