PMEG6010ETR NXP [NXP Semiconductors], PMEG6010ETR Datasheet - Page 5

• Manufacturer Part Number: PMEG6010ETR
• Description: High-temperature 60 V, 1 A Schottky barrier rectifier
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
PMEG6010ETR
Product data sheet
Symbol
Fig. 4.
I
C
t
V
R
rr
FRM
d
(A)
I
10
10
10
10
F
10
-1
-2
-3
-4
1
(1) T
(2) T
(3) T
(4) T
(5) T
(6) T
Forward current as a function of forward
voltage; typical values
0
(1)
(2)
(3)
j
j
j
j
j
j
0.1
= 175 °C
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
Parameter
reverse current
diode capacitance
reverse recovery time
peak forward recovery
voltage
(4)
0.2
(5)
0.3
(6)
0.4
0.5
Conditions
All information provided in this document is subject to legal disclaimers.
I
V
δ ≤ 0.02 ; pulsed
V
δ ≤ 0.02 ; pulsed
V
δ ≤ 0.02 ; pulsed
V
δ ≤ 0.02 ; pulsed
V
δ ≤ 0.02 ; pulsed
V
V
I
T
I
F
F
F
006aad117
V
j
R
R
R
R
R
R
R
0.6
= 1 A; T
= 0.5 A; I
= 1 A; dI
= 25 °C
F
= 5 V; T
= 10 V; T
= 60 V; T
= 60 V; T
= 60 V; T
= 1 V; f = 1 MHz; T
= 10 V; f = 1 MHz; T
(V)
0.7
j
F
= 175 °C
j
R
/dt = 40 A/µs; T
10 October 2012
= 25 °C; t
j
j
j
j
= 0.5 A; I
= 25 °C; t
= 25 °C; t
= -40 °C; t
= 125 °C; t
High-temperature 60 V, 1 A Schottky barrier rectifier
Fig. 5.
p
j
R(meas)
p
p
= 25 °C
≤ 300 µs;
j
(A)
p
I
p
≤ 300 µs;
≤ 300 µs;
= 25 °C
R
≤ 300 µs;
10
≤ 300 µs;
10
10
10
10
10
10
10
10
10
j
-10
= 25 °C
-1
-2
-3
-4
-5
-6
-7
-8
-9
= 0.1 A;
(1) T
(2) T
(3) T
(4) T
(5) T
(6) T
Reverse current as a function of reverse
voltage; typical values
0
j
j
j
j
j
j
(1)
= 175 °C
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
(2)
20
Min
-
-
-
-
-
-
-
-
-
-
(3)
(4)
(5)
(6)
PMEG6010ETR
40
Typ
365
1.2
1.7
30
0.6
14
120
40
4.4
500
© NXP B.V. 2012. All rights reserved
V
R
006aad118
(V)
Max
450
-
-
60
10
50
-
-
-
-
60
Unit
mV
µA
µA
µA
µA
mA
pF
pF
ns
mV
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