SI4484EY-T1 VISHAY [Vishay Siliconix], SI4484EY-T1 Datasheet - Page 2

• Manufacturer Part Number: SI4484EY-T1
• Description: N-Channel 100-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si4484EY
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
30
24
18
12
b
6
0
0
Parameter
a
a
1
V
DS
a
Output Characteristics
V
- Drain-to-Source Voltage (V)
GS
a
a
J
= 10 thru 6 V
2
= 25_C UNLESS OTHERWISE NOTED)
3
Symbol
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
4
5 V
4 V
5
V
V
I
DS
D
DS
^ 1 A, V
I
= 50 V, V
F
V
= 80 V, V
V
V
V
V
V
V
V
V
DS
= 3.1 A, di/dt = 100 A/ms
I
DS
DS
Test Condition
GS
GS
DS
S
DS
DD
DD
= 3.1 A, V
= 0 V, V
= V
w 5 V, V
= 10 V, I
= 6.0 V, I
= 15 V, I
= 80 V, V
= 50 V, R
= 50 V, R
GEN
GS
GS
GS
, I
= 10 V, R
GS
= 10 V, I
= 0 V, T
D
D
GS
GS
D
D
GS
L
L
= 250 mA
= "20 V
= 6.9 A
= 6.4 A
= 6.9 A
= 50 W
= 50 W
= 10 V
= 0 V
= 0 V
J
30
24
18
12
D
G
6
0
= 85_C
= 6.9 A
= 6 W
0
1
V
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
Min
2
0.5
30
2
T
C
25_C
= 150_C
3
0.028
0.032
Typ
1.25
0.8
7.6
5.4
25
24
16
10
35
20
50
S-03951—Rev. C, 26-May-03
Document Number: 71189
4
Max
"100
0.034
0.040
1.2
2.2
20
30
30
20
70
40
80
1
- 55_C
5
Unit
nC
nA
mA
mA
ns
W
W
W
V
A
S
V
6