SI4484EY-T1 VISHAY [Vishay Siliconix], SI4484EY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI4484EY-T1
• Description: N-Channel 100-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 71189
S-03951—Rev. C, 26-May-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.05
0.04
0.03
0.02
0.01
0.00
10
30
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 6.9 A
0.2
On-Resistance vs. Drain Current
= 50 V
6
5
V
SD
Q
T
g
J
- Source-to-Drain Voltage (V)
I
= 175_C
0.4
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
12
10
0.6
V
GS
18
15
= 6.0 V
0.8
T
V
J
GS
= 25_C
24
20
1.0
= 10 V
1.2
30
25
2500
2000
1500
1000
0.06
0.05
0.04
0.03
0.02
0.01
0.00
500
2.4
2.0
1.6
1.2
0.8
0.4
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
= 6.9 A
10
= 10 V
C
2
rss
0
T
V
V
J
GS
DS
- Junction Temperature (_C)
20
25
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Capacitance
4
50
Vishay Siliconix
C
30
C
oss
iss
75
I
6
D
= 6.9 A
100
40
Si4484EY
125
www.vishay.com
8
50
150
175
10
60
3