SI4947ADY-T1 VISHAY [Vishay Siliconix], SI4947ADY-T1 Datasheet - Page 2

• Manufacturer Part Number: SI4947ADY-T1
• Description: Dual P-Channel 30-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si4947ADY
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
20
16
12
8
4
0
0
b
Parameter
V
a
a
DS
2
Output Characteristics
a
- Drain-to-Source Voltage (V)
V
GS
2 V
= 10 thru 6 V
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
4
5 V
4 V
3 V
Symbol
V
r
r
6
I
DS(
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
t
SD
t
t
rr
fs
gs
gd
r
f
g
)
8
V
I
V
DS
D
DS
^ - 1 A, V
= - 10 V, V
I
F
= - 30 V, V
V
V
V
V
V
V
V
V
= - 1.7 A, di/dt = 100 A/ms
V
GS
GS
I
DS
DS
DS
S
DS
DD
DD
Test Condition
DS
= - 1.7 A, V
= V
= - 5 V, V
= - 10 V, I
= - 4.5 V, I
= - 15 V, I
= - 30 V, V
= - 10 V, R
= - 10 V, R
= 0 V, V
GEN
GS
GS
GS
, I
= - 10 V, R
= - 5 V, I
D
= 0 V, T
GS
GS
D
= - 250 mA
D
D
GS
GS
L
L
= - 2.5 A
= - 3.9 A
= - 3.0 A
= "20 V
= - 10 V
= 10 W
= 10 W
= 0 V
= 0 V
D
J
20
16
12
G
= 70_C
= - 3.9 A
8
4
0
= 6 W
0
1
V
GS
Transfer Characteristics
Min
- 1.0
- 15
2
- Gate-to-Source Voltage (V)
3
0.062
0.105
Typ
- 0.82
T
25_C
5.0
5.8
1.9
21
10
27
C
2
8
9
= - 55_C
S-31989—Rev. C, 13-Oct-03
4
Document Number: 71101
"100
Max
0.080
0.135
5
- 1.2
- 10
15
18
40
20
40
- 1
8
125_C
6
Unit
nA
mA
mA
nC
ns
V
A
W
W
S
V
7