SI4947ADY-T1 VISHAY [Vishay Siliconix], SI4947ADY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI4947ADY-T1
• Description: Dual P-Channel 30-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 71101
S-31989—Rev. C, 13-Oct-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.30
0.24
0.18
0.12
0.06
0.00
10
30
10
8
6
4
2
0
1
0.0
0
0
V
I
V
D
DS
GS
Source-Drain Diode Forward Voltage
= 3.9 A
On-Resistance vs. Drain Current
= 10 V
= 4.5 V
0.3
3
2
V
SD
Q
g
- Source-to-Drain Voltage (V)
I
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
0.6
T
6
4
J
= 150_C
0.9
9
6
T
V
J
GS
= 25_C
1.2
12
= 10 V
8
1.5
15
10
1000
0.40
0.32
0.24
0.16
0.08
0.00
800
600
400
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
rss
V
I
D
- 25
GS
= 3.9 A
= 10 V
2
6
T
V
V
0
C
J
GS
DS
oss
- Junction Temperature (_C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
12
4
I
D
Vishay Siliconix
C
50
= 3.9 A
iss
18
6
Si4947ADY
75
100
24
www.vishay.com
8
125
150
10
30
3