SI4955DY-T1-E3 VISHAY [Vishay Siliconix], SI4955DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4955DY-T1-E3
• Description: Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs
• Manufacturer: VISHAY [Vishay Siliconix]

Si4955DY
Vishay Siliconix
CHANNEL 1 TYPICAL CHARACTERISTICS 25 °C unless noted
www.vishay.com
4
- 0.2
- 0.4
0.6
0.4
0.2
0.0
30
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
0.4
Threshold Voltage
T
- Source-to-Drain Voltage (V)
J
- Temperature (°C)
25
I
D
0.6
= 250 µA
T
50
J
= 150 °C
0.8
75
0.01
100
0.1
1.0
10
T
100
1
J
0.1
= 25 °C
r
DS(on)
1.2
125
Limited
I
D(on)
Limited
Single Pulse
T
V
150
1.4
A
DS
= 25 °C
Safe Operating Area
- Drain-to-Source Voltage (V)
1
BV
I
DM
DSS
Limited
Limited
10
0.20
0.16
0.12
0.08
0.04
0.00
30
25
20
15
10
5
0
10 -
0
On-Resistance vs. Gate-to-Source Voltage
3
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
I
D
10 -
= 2 A
2
100
2
V
GS
Single Pulse Power
- Gate-to-Source Voltage (V)
10 -
1
Time (sec)
4
I
S-61006-Rev. C, 12-Jun-06
D
Document Number: 72241
1
= 5 A
6
10
8
100
600
10