SI4955DY-T1-E3 VISHAY [Vishay Siliconix], SI4955DY-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI4955DY-T1-E3
• Description: Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs
• Manufacturer: VISHAY [Vishay Siliconix]

Si4955DY
Vishay Siliconix
CHANNEL 2 TYPICAL CHARACTERISTICS 25 °C unless noted
www.vishay.com
6
0.10
0.08
0.06
0.04
0.02
0.00
20
16
12
5
4
3
2
1
0
8
4
0
0
0
0
V
I
D
DS
= 7 A
V
On-Resistance vs. Drain Current
GS
= 10 V
4
1
V
4
= 1.8 V
DS
Output Characteristics
Q
V
GS
g
- Drain-to-Source Voltage (V)
I
- Total Gate Charge (nC)
D
8
= 5 thru 2 V
Gate Charge
- Drain Current (A)
2
8
12
12
3
16
V
V
GS
GS
16
= 2.5 V
= 4.5 V
4
20
1.5 V
1 V
20
24
5
3000
2500
2000
1500
1000
500
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
8
4
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
V
I
D
- 25
rss
GS
= 7 A
= 4.5 V
0.4
V
4
GS
T
Transfer Characteristics
V
0
J
C
DS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
C
oss
iss
- Drain-to-Source Voltage (V)
25 °C
T
25
Capacitance
C
0.8
= 125 °C
8
50
S-61006-Rev. C, 12-Jun-06
Document Number: 72241
1.2
12
75
100
- 55 °C
1.6
16
125
150
2.0
20