SI1303DL-T1 VISHAY [Vishay Siliconix], SI1303DL-T1 Datasheet - Page 3

• Manufacturer Part Number: SI1303DL-T1
• Description: P-Channel 2.5-V (G-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 71075
S-61007–Rev. D, 12-Jun-06
0.001
0.01
0.1
10
2.0
1.6
1.2
0.8
0.4
0.0
1
12
0.0
9
6
3
0
0
0
Source-Drain Diode Forward Voltage
V
I
D
DS
= 1 A
On-Resistance vs. Drain Current
0.3
1
= 10 V
V
SD
T
1
Q
J
- Source-to-Drain Voltage (V)
g
= 150 °C
V
I
D
GS
2
- Total Gate Charge (nC)
Gate Charge
V
0.6
- Drain Current (A)
GS
= 3.6 V
= 2.5 V
T
3
2
J
= 25 °C
0.9
4
V
3
1.2
GS
= 4.5 V
5
1.5
6
4
250
200
150
100
1.6
1.2
0.8
0.4
0.0
- 50
50
2.5
2.0
1.5
1.0
0.5
0.0
0
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
- 25
D
rss
GS
= 1 A
= 4.5 V
C
1
4
iss
T
V
0
J
V
C
DS
- Junction Temperature ( C)
GS
oss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
Capacitance
2
25
8
I
50
D
Vishay Siliconix
= 1 A
3
12
75
Si1303DL
4
www.vishay.com
100
16
125
5
150
20
6
3