SI1303DL-T1 VISHAY [Vishay Siliconix], SI1303DL-T1 Datasheet - Page 4

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SI1303DL-T1

Manufacturer Part Number
SI1303DL-T1
Description
P-Channel 2.5-V (G-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

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Si1303DL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see
www.vishay.com
4
http://www.vishay.com/ppg?71075.
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
- 50
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Threshold Voltage
T
J
- Temperature (°C)
25
10
-3
Single Pulse
I
D
50
= 250 µA
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
Single Pulse
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
75
10
100
-2
125
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
150
10
-2
10
-1
10
1
20
16
12
8
4
0
-1
10
-3
10
-2
Single Pulse Powert
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
10
DM
JM
-1
Time (sec)
- T
t
1
A
1
T
S-61007–Rev. D, 12-Jun-06
= P
A
t
2
Document Number: 71075
= 25 °C
1
DM
Z
thJA
thJA
100
t
t
1
2
(t)
10
= 360 °C/W
100
600
10
600

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