SUM110N04-05H_08 VISHAY [Vishay Siliconix], SUM110N04-05H_08 Datasheet - Page 4

• Manufacturer Part Number: SUM110N04-05H_08
• Manufacturer: VISHAY [Vishay Siliconix]

SUM110N04-05H
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
1000
2.0
1.7
1.4
1.1
0.8
0.5
100
0.00001
0.1
10
- 50 - 25
1
On-Resistance vs. Junction Temperature
V
I
I
D
AV
GS
= 30 A
(A) at T
0.0001
= 10 V
Avalanche Current vs. Time
0
T
J
J
- Junction Temperature (°C)
= 150 °C
25
0.001
50
t
in
I
AV
(s)
75
(A) at T
0.01
100
J
= 25 °C
125
0.1
150
175
1
100
10
54
51
48
45
42
1
- 50 - 25
0
I
Source-Drain Diode Forward Voltage
D
= 1 mA
Drain Source Breakdown vs.
0
V
0.3
T
T
SD
Junction Temperature
J
J
- Junction Temperature (°C)
= 150 °C
- Source-to-Drain Voltage (V)
25
50
0.6
S-80274-Rev. B, 11-Feb-08
Document Number: 73131
75
100
0.9
T
125
J
= 25 °C
150
1.2
175