ipb180n03s4l-01 Infineon Technologies Corporation, ipb180n03s4l-01 Datasheet
ipb180n03s4l-01
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ipb180n03s4l-01 Summary of contents
Page 1
... = =25 °C D,pulse = =25 °C tot stg - - page 1 IPB180N03S4L-01 DS DS(on) D PG-TO263-7-3 Value 1) 180 =10V 180 720 530 180 ±16 188 -55 ... +175 55/175/ 1.05 m 180 A Unit °C 2009-12-03 ...
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... DSS T =25 ° = =85 ° = GSS =4 =90 A DS(on = =100 A DS(on page 2 IPB180N03S4L-01 Values min. typ. max 0 1 100 - 1.2 1.4 - 0.9 1.05 Unit K/W ...
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... V = =100A /dt =100 A/µ 0.8 K/W the chip is able to carry 335A at 25°C. thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB180N03S4L-01 Values min. typ. max. - 13500 17600 pF = 3370 4400 - 125 - = ...
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... Max. transient thermal impedance Z = f(t thJC parameter µs 10 µs 100 µ 100 [V] page 4 IPB180N03S4L- ≥ 100 T [° 0.5 0.1 0.05 0.01 single pulse - ...
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... DS(on) parameter 3 2 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 1.75 1.5 1.25 0.75 -55 °C 0 [V] page 5 IPB180N03S4L- ° 3 100 200 300 400 I [ -60 - 100 T [° 4 ...
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... Typ. capacitances 1400 µ 100 140 180 12 Typ. avalanche characteristics parameter: T 1000 100 10 1 0.8 1 1.2 1.4 [V] page 6 IPB180N03S4L- MHz [ j(start) 150 °C 100 °C 0 100 t [µs] AV Ciss Coss Crss °C ...
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... Q gate Rev. 1.0 14 Drain-source breakdown voltage V BR(DSS 125 175 16 Gate charge waveforms 120 150 180 [nC] page 7 IPB180N03S4L- -60 - 100 T [° 140 180 gate ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 IPB180N03S4L-01 2009-12-03 ...
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... Revision History Version Rev. 1.0 Date page 9 IPB180N03S4L-01 Changes 2009-12-03 ...