ipb180n03s4l-01 Infineon Technologies Corporation, ipb180n03s4l-01 Datasheet - Page 2

• Manufacturer Part Number: ipb180n03s4l-01
• Description: Optimos?-t2 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.0
Parameter
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Drain-source on-state resistance
2)
j
=25 °C, unless otherwise specified
Symbol
R
R
V
V
I
I
R
R
DSS
GSS
DS(on)
(BR)DSS
GS(th)
thJC
thJA
DS(on)
-
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=85 °C
page 2
=V
=30 V, V
=18 V, V
=0 V, I
=16 V, V
=4.5 V, I
=10 V, I
2
Conditions
cooling area
GS
2)
, I
D
D
= 1 mA
D
=140 µA
D
GS
GS
DS
=100 A
=90 A
=0 V,
=0 V,
=0 V
3)
min.
30
1
-
-
-
-
-
-
-
-
Values
0.01
typ.
1.5
1.2
0.9
5
1
-
-
-
-
IPB180N03S4L-01
max.
1.05
100
0.8
2.2
1.4
62
40
60
1
-
2009-12-03
Unit
K/W
V
µA
nA
m
mΩ