ipb180n03s4l-01 Infineon Technologies Corporation, ipb180n03s4l-01 Datasheet - Page 4

• Manufacturer Part Number: ipb180n03s4l-01
• Description: Optimos?-t2 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
= f(V
= f(T
1000
200
175
150
125
100
100
75
50
25
10
0
1
DS
0.1
0
C
); T
); V
p
C
GS
= 25 °C; D = 0
≥ 6 V
50
1
T
V
C
100
DS
[°C]
1 ms
[V]
100 µs
10
10 µs
150
1 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
= f(T
200
180
160
140
120
100
10
10
10
= f(t
10
80
60
40
20
0
-1
-2
-3
0
C
10
); V
0
p
-6
0.01
0.05
)
single pulse
0.5
0.1
GS
10
≥ 6 V
p
/T
-5
50
10
-4
T
t
C
100
10
p
[°C]
[s]
-3
IPB180N03S4L-01
10
-2
150
10
2009-12-03
-1
200
10
0