ipb180n03s4l-01 Infineon Technologies Corporation, ipb180n03s4l-01 Datasheet - Page 3

• Manufacturer Part Number: ipb180n03s4l-01
• Description: Optimos?-t2 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.0
1)
2)
3)
connection. PCB is vertical in still air.
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Current is limited by bondwire; with an R
Defined by design. Not subject to production test.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2)
2)
2)
2)
2)
2)
Symbol
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
thJC
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
= 0.8 K/W the chip is able to carry 335A at 25°C.
V
f =1 MHz
V
I
V
V
T
V
T
V
di
D
C
j
GS
DD
DD
GS
GS
R
=100 A, R
=25 °C
F
page 3
=25 °C
=20 V, I
/dt =100 A/µs
=0 V, V
=15 V, V
=24 V, I
=0 to 10 V
=0 V, I
Conditions
F
F
2
DS
=100 A,
=100A,
D
G
(one layer, 70 µm thick) copper area for drain
GS
=180 A,
=1.6
=25 V,
=10 V,
min.
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-
-
-
-
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-
-
-
-
-
-
-
-
-
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Values
13500
3370
typ.
125
187
180
200
3.1
0.9
57
23
39
25
8
5
-
-
IPB180N03S4L-01
17600 pF
max.
4400
250
239
180
720
1.3
51
50
-
-
-
-
-
-
-
2009-12-03
Unit
ns
nC
V
A
V
ns
nC