JAN-03 VISHAY [Vishay Siliconix], JAN-03 Datasheet - Page 2

• Manufacturer Part Number: JAN-03
• Description: Basic Definitions
• Manufacturer: VISHAY [Vishay Siliconix]

Vishay Semiconductors
Polarity conventions for diodes
Here, the direction of arrows is selected in such a way
that the numerical values of currents and voltages are
positive both for forward (F or f) and reverse (R or r)
directions.
Arrangement of Symbols
Letter symbols for current, voltage and power
(according to DIN 41 785, sheet 1)
To represent current, voltage and power, a system of
basic letter symbols is used. Capital letters are used
for the representation of peak, mean, DC or root-
mean-square values. Lower case letters are used for
the representation of instantaneous values which
vary with time.
Capital letters are used as subscripts to represent
continuous or total values, while lower case letters are
used to represent varying values.
The following table summarizes the rules given above
.
Letter symbols for impedance, admittances, two-
port parameters etc.
For impedance, admittance, two-port parameters,
etc. capital letters are used for the representation of
external circuits of which the device is only a part.
Lower case letters are used for the representation of
electrical parameters inherent in the device.
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2
Instantaneous values which
vary with time
Varying component alone, i.e.,
instantaneous,
root-mean-square, maximum
or average values
Upper-case
Upper-case
A
A
I
F
Subscript(s)
Basic letter
Figure 3.
V
V
F
R
Maximum (peak) average
(mean) continuous (DC) or
root-mean-square (RMS)
values
Continuous (without signal) or
total (instantaneous, average or
maximum) values
I
R
Upper-case
Upper-case
K
K
CAPITAL letters are used as subscripts for the desig-
nation of static (DC) values, while lower case letters
are used for the designation of small-signal values.
If more than one subscript is used (h
symbols are either all capital or all lower case.
If the subscript has numeric (single, double, etc.) as
well as letter symbol(s) (such as h
ferentiation between static and small-signal value is
made only by a subscript letter symbol.
Other quantities (values) which deviate from the
above rules are given in the list of letter symbols.
The following table summarizes the rules given above
.
Examples:
G
Z
f
I
Example for the use of symbols
according to 41785 and IEC 148
V
V
V
Electrical parameters inherent
in the semiconductor devices
except inductances and
capacitances
Small-signal values
T
F
S
F
R
FSM
P
V
V
V
V
V
V
V
V
RWM
FWM
RRM
RSM
FSM
FRM
R
F
Power gain
Source impedance
Transition frequency
Forward current
Forward voltage
Reverse voltage
Surge forward voltage (non-repetitive)
0
Upper-case
Upper-case
Subscript(s)
Basic letter
Figure 4.
Electrical parameters of
external circuits and of circuits
in which the semiconductor
device forms only a part; all
inductances and capacitances
Static (dc) values
Document Number 84067
21E
Upper-case
Upper-case
FE
or h
, h
Rev. 7, 07-Jan-03
fe
VISHAY
21e'
t
93 7796
), the letter
), the dif-