JAN-03 VISHAY [Vishay Siliconix], JAN-03 Datasheet - Page 3

• Manufacturer Part Number: JAN-03
• Description: Basic Definitions
• Manufacturer: VISHAY [Vishay Siliconix]

V
V
V
V
V
List of Symbols
A
a
b
C
C
C
C
C
C
E
F
f
f
g
K
I
i
I
I
I
I
I
I
i
I
I
I
I
I
I
I
l
LOCEP (local epitaxy)
P
P
Document Number 84067
Rev. 7, 07-Jan-03
VISHAY
F
R
g
F
FAV
FRM
FSM
FWM
R
RM
RAV
RRM
RSM
RWM
S
Z
ZM
pn
RSM
FRM
RRM
FWM
RWM
R
R
case
D
i
L
P
Surge reverse voltage (non-repetitive)
Repetitive peak forward voltage
Repetitive peak reverse voltage
Crest working forward voltage
Crest working reverse voltage
Anode
Distance (in mm)
Normalized power factor
Capacitance, general
Case capacitance
Diode capacitance
Junction capacitance
Load capacitance
Parallel capacitance
Reverse avalanche energy, non-repetitive
Noise figure
Frequency
Cut-off-frequency
Conductance
Kelvin, absolute temperature
Forward current
Forward current, instantaneous total value
Average forward current, rectified current
Repetitive peak forward current
Surge forward current, non-repetitive
Crest working forward current
Reverse current
Maximum reverse current
Reverse current, instantaneous total value
Average reverse current
Repetitive peak reverse current
Non-repetitive peak reverse current
Crest working reverse current
Supply current
Z-operating current
Z-maximum current
Length (in mm), (case-holder/soldering point)
A registrated trade mark of TEMIC for a pro-
cess of epitaxial deposition on silicon. Applica-
tions occur in planer Z-diodes. It has an
advantage compared to the normal process,
with improved reverse current.
Power
Reverse Power
P
P
Pvp
Q
Q
R
r
R
r
R
r
r
R
R
R
r
r
r
T
T
T
T
t
T
t
T
T
T
t
t
t
t
T
T
V
VF
V
V
V
V
t
--- -
T
av
fr
P
r
rr
s
f
P
r
s
z
zj
zth
p
amb
case
j
K
L
sd
stg
tot
V
(BR)
F
FAV
o
FP
F
L
R
thJA
thJC
thJL
rr
Total power dissipation
Power dissipation, general
Pulse-power dissipation
Quality
Reverse recovery charge
Forward resistance
Differential forward resistance
Load resistor
Parallel resistance, damping resistance
Reverse resistance
Differential reverse resistance
Series resistance
Thermal resistance between junction and
ambient
Thermal resistance between junction and case
Thermal resistance junction lead
Differential Z-resistance in breakdown region
(range) r
Z-resistance at constant junction temperature,
inherent Z-resistance
Thermal part of the Z-resistance
Temperature, measured in centigrade
Absolute temperature, Kelvin temperature
Period duration
Ambient temperature (range)
Integration time
Case temperature
Forward recovery time
Junction temperature
Temperature coefficient
Connecting lead temperature in the holder (sol-
dering point) at the distance/(mm) from case
Pulse duration (time)
Duty cycle
Rise time
Reverse recovery time
Storage time
Soldering temperature
Storage temperature (range)
Breakdown voltage
Forward voltage
Forward voltage, instantaneous total value
Average forward voltage
Rectified voltage
Turn on transient peak voltage
z
= r
zj
+ r
Vishay Semiconductors
zth
www.vishay.com
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