IRHNJ3130 IRF [International Rectifier], IRHNJ3130 Datasheet - Page 2

• Manufacturer Part Number: IRHNJ3130
• Description: 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
• Manufacturer: IRF [International Rectifier]

Source-Drain Diode Ratings and Characteristics
For footnotes refer to the last page
Electrical Characteristics
Thermal Resistance
IRHNJ7130
BV DSS
R DS(on)
V GS(th)
g fs
I DSS
I GSS
I GSS
Q g
Q gs
Q gd
t d
t r
t d
t f
L S + L D
C iss
C oss
C rss
R thJC
I S
I SM
V SD
t rr
Q RR Reverse Recovery Charge
t on
BV DSS / T J Temperature Coefficient of Breakdown
2
(on)
(off)
Parameter
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Forward Turn-On Time
Parameter
Junction-to-Case
Parameter
Drain-to-Source Breakdown Voltage
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .
@ Tj = 25°C (Unless Otherwise Specified)
Min Typ Max Units
Min Typ Max Units
—
—
—
—
—
—
Min
100
2.0
2.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.11
Typ Max Units
340
1.67
960
4.0
85
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
14.4
275
1.5
2.5
58
-100
0.18
0.20
250
100
4.0
—
—
25
50
10
20
35
75
70
60
—
—
—
—
—
°C/W
nS
µC
A
V
V/°C
S ( )
nH
nA
nC
ns
pF
V
V
A
T j = 25°C, I F = 14.4A, di/dt
T
j
drain pad to center of source pad
= 25°C, I S = 14.4A, V GS = 0V
Measured from the center of
Reference to 25°C, I D = 1.0mA
V DS > 15V, I DS = 9.1A
V DS = V GS , I D = 1.0mA
Test Conditions
Test Conditions
V GS = 12V, I D = 14.4A
V GS = 12V, I D = 14.4A
V GS = 0V, I D = 1.0mA
V GS = 0V, T J = 125°C
V DD = 50V, I D = 14.4A,
V GS = 0V, V DS = 25V
V GS = 12V, I D = 9.1A
Test Conditions
V DS = 80V, V GS =0V
V DD
V GS = -20V
V DS = 80V,
V GS = 20V
f = 1.0MHz
V DS = 50V
R G = 7.5
Pre-Irradiation
25V
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100A/ s