IRHNJ3130 IRF [International Rectifier], IRHNJ3130 Datasheet - Page 8

• Manufacturer Part Number: IRHNJ3130
• Description: 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
• Manufacturer: IRF [International Rectifier]

Case Outline and Dimensions — SMD-0.5
Footnotes:
IRHNJ7130
IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
maximum junction temperature.
Peak I L = 14.4A, V GS = 12V
V DD
8
Pulse width
Repetitive Rating; Pulse width limited by
V DD = 25V, starting T J = 25°C, L= 1.4mH,
I SD
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
14.4A, di/dt
100V, T J
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: [phone]
300 s; Duty Cycle
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: [phone]
150°C
395A/ s,
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
2%
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: [phone]
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
Data and specifications subject to change without notice. 3/00
Total Dose Irradiation with V DS Bias.
12 volt V GS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A
80 volt V DS applied and V GS = 0 during
Total Dose Irradiation with V GS Bias.
irradiation per MlL-STD-750, method 1019, condition A
PAD ASSIGNMENTS
Pre-Irradiation
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