IRHNJ3130 IRF [International Rectifier], IRHNJ3130 Datasheet - Page 3

• Manufacturer Part Number: IRHNJ3130
• Description: 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
• Manufacturer: IRF [International Rectifier]

Table 2. Single Event Effect Safe Operating Area
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
1. Part numbers IRHNJ7130, IRHNJ3130, IRHNJ4130
2. Part number IRHNJ8130
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
www.irf.com
Radiation Characteristics
V
I
I
I
R
R
V
BV
GSS
GSS
DSS
Ion
Cu
Br
SD
GS(th)
DS(on)
DS(on)
DSS
MeV/(mg/cm
Drain-to-Source Breakdown Voltage
LET
28.0
36.8
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source
On-State Resistance (SMD-0.5)
Diode Forward Voltage
Parameter
2
))
Energy
(MeV)
285
305
Fig a. Single Event Effect, Safe Operating Area
120
100
80
60
40
20
Range
0
(µm)
43.0
39.0
0
@V
-5
100
100
GS
100
Min
2.0
=0V @V
100K Rads(Si)
—
—
—
—
—
—
-10
VGS
Max
0.19
-100
0.18
1.5
4.0
100
—
25
GS
100
-15
1
90
=-5V @V
300K to 1000K Rads (Si)
Min
100
1.25
-20
—
—
—
—
—
—
V
DS
GS
100
70
-25
0.24
=-10V @V
0.25
100
-100
Max
1.5
(V)
25
4.5
—
2
Cu
Br
Units
nA
µA
V
V
GS
80
50
=-15V @V
V
V
GS
V
V
Test Conditions
V
V
GS
GS
GS
DS
GS
= V
V
V
= 0V, I
GS
= 80V, V
= 12V, I
GS
= 12V, I
= 0V, I S = 14.4A
DS
GS
= -20 V
= 20V
60
—
IRHNJ7130
, I
=-20V
D
D
D
D
= 1.0mA
GS
= 1.0mA
= 9.1A
= 9.1A
=0V
3