IRHNJ3130 IRF [International Rectifier], IRHNJ3130 Datasheet - Page 5

• Manufacturer Part Number: IRHNJ3130
• Description: 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
• Manufacturer: IRF [International Rectifier]

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Pre-Irradiation
2000
1500
1000
500
100
0.1
10
0
1
0.0
1
Fig 7. Typical Source-Drain Diode
Fig 5. Typical Capacitance Vs.
T = 150 C
Drain-to-Source Voltage
V
J
V
DS
SD
0.5
V
C
C
C
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
Forward Voltage
GS
iss
rss
oss
°
=
=
=
=
0V,
C
C
C
1.0
gs
gd
ds
+ C
+ C
10
T = 25 C
J
f = 1MHz
gd ,
gd
C iss
C oss
C rss
1.5
C
°
ds
SHORTED
V
2.0
GS
= 0 V
100
2.5
1000
100
10
20
16
12
1
8
4
0
Fig 6. Typical Gate Charge Vs.
Fig 8. Maximum Safe Operating Area
0
1
T
T
Single Pulse
I =
D
C
J
= 25 C
= 150 C
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
14 A
V
10
DS
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
10
20
BY R
30
DS(on)
V
V
V
FOR TEST CIRCUIT
DS
DS
DS
SEE FIGURE
= 80V
= 50V
= 20V
100
40
100us
1ms
10ms
IRHNJ7130
50
13
1000
5
60